2SB1068 datasheet(2/4 Pages) DGNJDZ

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T =25

unless otherwise specified

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=- 0.1mA,IE=0

-20

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-16

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.1mA,IC=0

-6

Collector cut-off current

ICBO

VCB=-16V,IE=0

-0.1

۷A

Emitter cut-off current

IEBO

VEB=-6V,IC=0

-0.1

۷A

hFE(1)

VCE=-2V, IC=-0.1A

135

650

DC current gain

hFE(2)

VCE=-2V, IC=-1.5A

100

VCE(sat)1

IC=-1A,IB=-10mA

-0.4

VCE(sat)2

IC=-1.5A,IB=-20mA

-0.5

Collector-emitter saturation voltage

VCE(sat)3

IC=-1.5A,IB=-75mA

-0.5

Base-emitter saturation voltage

VBE (sat)

IC=-1.5A,IB=-75mA

-1.2

Base-emitter voltage

VBE

VCE=-6V, IC=-5mA

-0.55

-0.65

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

Transition frequency

VCE=-10V,IC=-50mA

100

MHz

CLASSIFICATION OF hFE(1)

RANK

RANGE

135-270

200-400

300-650

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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