DTD143E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R206-084,A

TYPICAL CHARACTERISTIC

100

50

20

10

5

2

1

500m

200m

100m

500μ1m 2m

5m 10m20m 50m100m200m 500m

Input Voltage vs. Output Current

(ON Characteristics)

Ta=-40℃

25℃

100℃

10m

0

0.5

1.0

1.5

2.0

25℃

Ta=100℃

-40℃

5m

2m

1m

50μ

200μ

100μ

50μ

20μ

10μ

5μ

2μ

1μ

2.5

3.0

Output Current vs. Input Voltage

(OFF Characteristics)

1K

500

500μ1m 2m

5m 10m20m 50m100m200m500m

-40℃

25℃

Ta=100℃

200

100

50

20

10

5

2

1

DC Current Gain vs. Output Current

1

500m

500μ1m 2m

5m 10m 20m 50m100m200m500m

-40℃

25℃

Ta=100℃

200m

100m

50m

20m

10m

5m

2m

1m

Output Voltage vs. Output Current

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.