Technical Data

Data Sheet N2062

, REV.A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

RB13

RB13 SURFACE MOUNT

SCHOTTKY BARRIER DIODE

Characteristic

Symbol

Typ.

Max.

Unit

Forward Voltage Drop *

@IF=1.0A

VFM

0.55

0.57

V

Peak Reverse Leakage Current*

IRM

8

50

uA

Junction Capacitance(VR=0V, f=1MHz)

CJ

58

-

pF

* Pulse width < 300 µs, duty cycle < 2%

Features

Circuit Diagram

Mechanical Data

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Characteristic

Symbol

RB13

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

V

Forward Continuous Current

IF

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated

load(JEDEC Method)

IFSM

5

A

Typical Thermal Resistance, Junction to Ambient Air

RθJA

667

°C/W

Junction and Storage Temperature Range

TJ, TSTG

-55 to +125

°C



Case: SOT-353, Molded Plastic

SOT-353



Low forward voltage



This is a Halogen Free device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon

request