2SB1260L-R-AB3-R datasheet(3/4 Pages) UTC

3 / 4 page

2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

www.unisonic.com.tw

QW-R208-017,C

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TYPICAL CHARACTERICS

-0.2

-1000

-0.1

Base to Emitter Voltage, VBE(V)

Grounded Emitter Propagation

Characteristics

-1 -2

-5 -10 -20

200

Collector Current, Ic(mA)

DC Current Gain vs. Collector

Current

100

-0.4 -0.6 -0.8

-1.6

-1.4

-1.2

-1.0

-1

-10

-1.0

Collector to Emitter Voltage, VCE(V)

Grounded Emitter Output

Characteristics

-0.2

-0.4

-0.8

-1.6

-2.0

-1.2

-0.4

-0.6

-0.8

IB =0mA

Ta=25℃

-0.15mA

-0.1mA

-0.05mA

-50-100-200-500-1000

500

1000

5 10 20

Emitter Current, IE (mA)

Collector-emitter Saturation Voltage

vs. Collector Current

50 100200 5001000

100

Collector to Base Voltage, VCB(V)

Collector Output Capacitance vs.

Collector -Base Voltage

-100

VCE = -5V

Ta=25℃

-0.2

-0.6

-1.0

-1.4

-1.8

-0.2mA

-0.25mA

-0.3mA

-0.35mA

-0.4mA

-0.45mA

-2000

VcE= -1V

VcE= -3V

Ta=25℃

-1 -2

-5 -10 -20

-0.2

-0.05

-0.1

-50-100-200-500-1000

-0.5

-0.02

-0.01

-2000

Collector Current, Ic(mA)

-1

-2

Ta=25℃

Ic/IB=20

200

500

1000

Ta=25℃

VCE = -5V

Gain Bandwidth Product vs. Emitter

Current

-0.1 -0.2 -0.5-1 -2

-5 -10 -20

-50 -100

100

200

500

Ta=25℃

f=1MHz

1000

IE=0A

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