MMBT1015L-X-AE3-R datasheet(2/4 Pages) UTC

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MMBT1015

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-015,E

ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

SOT-23

250

Collector Dissipation

SOT-523/SOT-113/SOT-323

200

Collector Current

-150

Base Current

-50

Junction Temperature

125

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

Ic = -100

µA, I

E = 0

-50

Collector-Emitter Breakdown Voltage

BVCEO

Ic = -10mA, IB = 0

-50

Emitter-Base Breakdown Voltage

BVEBO

IE = -10µA, Ic = 0

-5

Collector-Emitter Saturation Voltage

VCE(SAT) Ic = -100mA, IB = -10mA

-0.1

-0.3

Base-Emitter Saturation Voltage

VBE(SAT) Ic = -100mA, IB = -10mA

-1.1

Collector Cut-off Current

ICBO

VCB = -50V, IE = 0

-100

Emitter Cut-off Current

IEBO

VEB = -5V, Ic = 0

-100

hFE1

VCE = -6V, Ic = -2mA

120

700

DC Current Gain

hFE2

VCE = -6V, Ic = -150mA

Transition Frequency

VCE = -10V, Ic = -1mA

MHz

Output Capacitance

COB

VCB = -10V, IE = 0, f = 1MHz

4.0

7.0

Noise Figure

Ic = -0.1mA, VCE = -6V

RG= 1kΩ, f = 100Hz

0.5

CLASSIFICATION OF hFE1

RANK

RANGE

120-240

200-400

350-700

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