SST38VF6401B datasheet(26/56 Pages) MICROCHIP

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SST38VF6401B / SST38VF6402B / SST38VF6403B / SST38VF6404B

DS20005002D-page 26

Preliminary

 2013 Microchip Technology Inc.

6.0

AC CHARACTERISTICS

TABLE 6-1:

READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V

Symbol

Parameter

Min

Max

Units

TRC

Read Cycle Time

TCE

Chip Enable Access Time

TAA

Address Access Time

TPACC

Page Access Time

TOE

Output Enable Access Time

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

TOLZ1

OE# Low to Active Output

TCHZ1

CE# High to High-Z Output

TOHZ1

OE# High to High-Z Output

TOH1

Output Hold from Address Change

TRP1

RST# Pulse Width

500

TRHR1

RST# High before Read

TRYE1,2

2. This parameter applies to Block-Erase and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode

μs

TRY1

RST# Pin Low to Read Mode – not during Program

or Erase algorithms.

500

TRPD1

RST# Input Low to Standby mode

μs

TRB1

RY / BY# Output high to CE# / OE# pin Low

TPWD

Delay for each password check

μs

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