2SC2712

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-029.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

150

mA

Base Current

30

mA

Collector Power Dissipation

150

mW

Junction Temperature

+125

℃

Storage Temperature

-55 ~ +125

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

70

700

Collector-Emitter Saturation Voltage

0.1

0.25

V

Transistor Frequency

80

MHz

Collector Output Capacitance

2.0

3.5

pF

Noise Figure

NF

f=1kHz, Rg=10KΩ

1.0

10

dB

RANK

O

Y

G

L

RANGE

70~140

120~240

200~400

350~700