CAT9554, CAT9554A

2

Doc. No. 25088, Rev. B

© 2006 by Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

PIN DESCRIPTION

PIN CONFIGURATION

SOIC (W)

TSSOP (Y)

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

A0

A1

A2

I/O0

I/O1

I/O2

I/O3

VSS

VCC

SDA

SCL

INT

I/O7

I/O6

I/O5

I/O4

P

O

S

S

T

/

C

I

O

SN

F

Q

TE

M

A

N

N

I

PN

O

I

T

C

N

U

F

15

1A

0

0

t

u

p

n

I

s

s

e

r

d

d

A

26

1A

1

1

t

u

p

n

I

s

s

e

r

d

d

A

31

A

2

2

t

u

p

n

I

s

s

e

r

d

d

A

7

-

45

-

2O

/

I

3

-

0

3

t

r

o

P

t

u

p

t

u

O

/

t

u

p

n

I

o

t

0

t

r

o

P

t

u

p

t

u

O

/

t

u

p

n

I

86

V

S

S

d

n

u

o

r

G

2

1

-

90

1

-

7O

/

I

7

-

4

7

t

r

o

P

t

u

p

t

u

O

/

t

u

p

n

I

o

t

4

t

r

o

P

t

u

p

t

u

O

/

t

u

p

n

I

3

11

1T

N

I)

n

i

a

r

d

n

e

p

o

(

t

u

p

t

u

O

t

p

u

r

r

e

t

n

I

4

12

1L

C

Sk

c

o

l

C

l

a

i

r

e

S

5

13

1A

D

Sa

t

a

D

l

a

i

r

e

S

6

14

1V

C

C

y

l

p

p

u

S

r

e

w

o

P

TQFN (HV4)

1

2

3

4

SCL

INT

I/O7

I/O6

12

11

10

9

A2

I/O0

I/O1

I/O2

A1

A0

VCC SDA

I/O3 VSS I/O4 I/O5

4 x 4 mm

Top View

Notes:

(1)

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this

specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

(2)

This parameter is tested initially and after a design or process change that affects the parameter.

(3)

Voltage on Any Pin with

Respect to Ground ........................ –0.5V to +5.5V

DC Input Current ............................................. +20 mA

RELIABILITY CHARACTERISTICS

l

o

b

m

y

Sr

e

t

e

m

a

r

a

Pd

o

h

t

e

M

t

s

e

T

e

c

n

e

r

e

f

e

Rn

i

Ms

t

i

n

U

P

A

Z

V

)

2

(

y

t

il

i

b

i

t

p

e

c

s

u

S

D

S

E2

2

D

S

E

J

d

r

a

d

n

a

t

S

C

E

D

E

J0

0

0

2s

t

l

o

V

H

T

L

I

)

3

(

)

2

(

p

u

-

h

c

t

a

L7

1

d

r

a

d

n

a

t

S

C

E

D

E

J0

0

1A

m

Package Power Dissipation

°C) ................................... 1.0W

Junction Temperature ..................................... +150

°C

Storage Temperature ........................ -65

°C to +150°C