STM32G431C6 datasheet(73/198 Pages) STMICROELECTRONICS

73 / 198 page

DS12589 Rev 6

73/198

STM32G431x6 STM32G431x8 STM32G431xB

Electrical characteristics

160

VPVD4

PVD threshold 4

Rising edge

2.69

2.74

2.79

Falling edge

2.59

2.64

2.69

VPVD5

PVD threshold 5

Rising edge

2.85

2.91

2.96

Falling edge

2.75

2.81

2.86

VPVD6

PVD threshold 6

Rising edge

2.92

2.98

3.04

Falling edge

2.84

2.90

2.96

Vhyst_BORH0

Hysteresis voltage of BORH0

Hysteresis in

continuous

mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis voltage of BORH

(except BORH0) and PVD

100

IDD

(BOR_PVD)(2)

BOR(3) (except BOR0) and

PVD consumption from VDD

1.1

1.6

µA

VPVM1

VDDA peripheral voltage

monitoring (COMP/ADC)

Rising edge

1.61

1.65

1.69

Falling edge

1.6

1.64

1.68

VPVM2

VDDA peripheral voltage

monitoring (OPAMP/DAC)

Rising edge

1.78

1.82

1.86

Falling edge

1.77

1.81

1.85

Vhyst_PVM1

PVM1 hysteresis

Vhyst_PVM2

PVM2 hysteresis

IDD

(PVM1/PVM2)

(2)

PVM1 and PVM2

consumption from VDD

µA

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power

sleep modes.

2. Guaranteed by design.

3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply

current characteristics tables.

Table 19. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

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