Continental Device India Pvt. Ltd

An ISO/TS 16949,

ISO 9001 and ISO 14001 Certified Company

TCIL6568

TCIL6568_REV02_22102016

D a t a s h e e t

Page 6 of 10

3、Electrical Characteristics

3. 1、Absolute Maximum Ratings

Unless otherwise specified, Tamb= 25℃

Parameter

Symbol

Value

Unit

Supply Voltage (Note 1)

VCC

7.5~25

V

Peak Value of the Power MOSFET Drain Voltage

VDS

-0.3~600

V

Low Voltage Terminal (CS, CAP, ZCD)

-0.3~6

V

Maximum Clamp Current for VCC Pin

ICC_MAX

10

mA

Continuous Power Dissipation (Note 2)

PDMAX

0.45

W

Thermal resistance

θ

JA

145

℃/W

Junction Temperature

TJ

-40 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

ESD (HBM)

2

kV

Note 1：Exceed the limit parameter, the IC would be damaged.

Note2：The maximum power dissipation of IC falls along with the temperature, which

determined by thermal resistance

θ

JA,

junction temperature TJ and ambient

temperature TA. The maximum allowed power dissipation is PDMAX =（TJMAX -TA）

/θ

JA.

3. 2、Electrical Characteristics

Unless otherwise specified, Tamb= 25 ℃

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Supply Voltage

Supply range

VCC

7.5

-

25

V

VCC turn on threshold

VCC_ON

VCC Rising

15

17

19

V

VCC turn off threshold

VCC_OFF

VCC Falling

6.5

7.5

9

V

VCC Clamp Voltage

VCC_CLAMP

20

VCC Start Up Current

ICC_ON

VCC Rising

VCC=VCC_ON-1V

30

50

μA

Operating current

ICC_OP

FOP=10kHz

300

600

μA

Zero Current Detector (ZCD)

Zero current detect

threshold

VZCD_FALL

ZCD Falling

0.2

V

Zero current detect

hysteresis

VZCD_HYS

ZCD Rising

0.15

V

Output OVP Threshold

VZCD_OVP

1.6

V

Maximum On Time

TON_MAX

20

μs

Minimum Off Time

TOFF_MIN

3

μs

To be continued