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BYQ28EB Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYQ28EB Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() Philips Semiconductors Product specification Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series ultrafast, rugged Fig.1. Definition of t rr1, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)) per diode; square current waveform where I F(AV) =IF(RMS) x √D. Fig.4. Circuit schematic for t rr2 Fig.5. Definition of t rr2 Fig.6. Maximum forward dissipation P F = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr shunt Current to ’scope D.U.T. Voltage Pulse Source R time time V F V fr V F I F I = 1A R rec I = 0.25A 0A trr2 0.5A IF IR 01 2 345 67 8 0 1 2 3 4 5 6 7 8 D = 1.0 0.5 0.2 0.1 BYQ28 IF(AV) / A PF / W Tmb(max) / C 150 145 140 135 130 125 120 115 110 D = tp tp T T t I Vo = 0.748 V Rs = 0.0293 Ohms 0123456 0 1 2 3 4 5 6 a = 1.57 1.9 2.2 2.8 4 BYQ28 IF(AV) / A PF / W Tmb(max) / C 150 145 140 135 130 125 120 Vo = 0.748 V Rs = 0.0293 Ohms October 1998 3 Rev 1.300 |
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