BYV34 datasheet(2/5 Pages) PHILIPS

2 / 5 page

Philips Semiconductors

Product specification

Dual rectifier diodes

BYV34 series

ultrafast

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 10 A; Tj = 150˚C

0.87

1.05

F = 20 A

1.10

1.35

Reverse current

R = VRRM

-10

µA

R = VRRM; Tj = 100 ˚C

0.2

0.6

Reverse recovery charge

F = 2 A to VR ≥ 30 V;

F/dt = 20 A/µs

Reverse recovery time

F = 1 A to VR ≥ 30 V;

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 10 A to VR ≥ 30 V;

4.0

5.0

F/dt = 50 A/µs; Tj = 100˚C

Forward recovery voltage

F = 10 A; dIF/dt = 10 A/µs

2.5

Fig.1. Definition of t

rr, Qs and Irrm

Fig.2. Definition of V

Fig.3. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square wave where I

F(AV) =IF(RMS) x √D.

Fig.4. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

100%

10%

time

rrm

D = 1.0

0.5

0.2

0.1

BYV34

Rs = 0.0100 Ohms

Vo = 0.9400 V

IF(AV) / A

PF / W

Tmb(max) / C

150

138

126

114

102

D =

time

V F

02468

a = 1.57

1.9

2.2

2.8

BYV34

Rs = 0.01 Ohms

Vo = 0.94 V

IF(AV) / A

PF / W

Tmb(max) / C

150

145.2

140.4

135.6

130.8

126

121.1

conduction

angle

form

factor

degrees

120

180

2.8

2.2

1.9

1.57

October 1998

Rev 1.400

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