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BYV74F Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV74F Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() Philips Semiconductors Product specification Dual rectifier diodes BYV74F series ultrafast THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to both diodes conducting heatsink with heatsink compound - - 4.0 K/W without heatsink compound - - 8.0 K/W per diode with heatsink compound - - 5.0 K/W without heatsink compound - - 9.0 K/W R th j-a Thermal resistance junction to in free air. - 35 - K/W ambient ELECTRICAL CHARACTERISTICS characteristics are per diode at T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 15 A; Tj = 150˚C - 0.95 1.12 V I F = 15 A - 1.08 1.25 V I F = 30 A - 1.15 1.36 V I R Reverse current V R = VRRM -10 50 µA V R = VRRM; Tj = 100 ˚C - 0.3 0.8 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 40 60 nC dI F/dt = 20 A/µs t rr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 50 60 ns dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A to VR ≥ 30 V; - 4.2 5.2 A dI F/dt = 50 A/µs; Tj = 100˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 2.5 - V September 1998 2 Rev 1.300 |
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