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BYV74F Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYV74F
Description  Dual rectifier diodes ultrafast
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV74F Datasheet(HTML) 2 Page - NXP Semiconductors

  BYV74F Datasheet HTML 1Page - NXP Semiconductors BYV74F Datasheet HTML 2Page - NXP Semiconductors BYV74F Datasheet HTML 3Page - NXP Semiconductors BYV74F Datasheet HTML 4Page - NXP Semiconductors BYV74F Datasheet HTML 5Page - NXP Semiconductors BYV74F Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
both diodes conducting
heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
8.0
K/W
per diode
with heatsink compound
-
-
5.0
K/W
without heatsink compound
-
-
9.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
35
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 15 A; Tj = 150˚C
-
0.95
1.12
V
I
F = 15 A
-
1.08
1.25
V
I
F = 30 A
-
1.15
1.36
V
I
R
Reverse current
V
R = VRRM
-10
50
µA
V
R = VRRM; Tj = 100 ˚C
-
0.3
0.8
mA
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
40
60
nC
dI
F/dt = 20 A/µs
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
50
60
ns
dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
4.2
5.2
A
dI
F/dt = 50 A/µs; Tj = 100˚C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/µs
-
2.5
-
V
September 1998
2
Rev 1.300



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