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BYW28 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYW28 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1997 Nov 26 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction. The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD115) and symbol. handbook, halfpage ka MAM384 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYW28-500 − 500 V BYW28-600 − 600 V VR continuous reverse voltage BYW28-500 − 500 V BYW28-600 − 600 V IF(AV) average forward current Ttp =85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 4A Tamb =60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 1.7 A IFRM repetitive peak forward current Ttp =85 °C; see Fig.4 − 46 A Tamb =60 °C; see Fig.5 − 21 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 170 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C |
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