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SM2670NSC Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SM2670NSC Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  1 N-Channel 100 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a, e Qg (Typ.) 100 0.095 at VGS = 10 V 3.2 4.2 nC 0.105 at VGS = 4.5 V 3.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 3.2e A TC = 70 °C 2.8 e TA = 25 °C 3.0b, c TA = 70 °C 2.4b, c Pulsed Drain Current (t = 300 µs) IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.1b, c Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 SM2670NSC www.VBsemi.com 6 4 1 2 3 5 Top View D D G D D S TSOP-6 服务热线：400-655-8788 |
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