Philips Semiconductors

Product specification

Rectifier diodes

BYW29EX series

ultrafast, rugged

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass

passivated

epitaxial

rectifier

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

diodes in a full pack plastic envelope,

featuring low forward voltage drop,

BYW29EX-

150

200

ultra-fast recovery times, soft recovery

V

RRM

Repetitive peak reverse

150

200

V

characteristic and guaranteed reverse

voltage

surge and ESD capability. They are

V

F

Forward voltage

0.895

0.895

V

intended for use in switched mode power

I

F(AV)

Forward current

8

8

A

supplies and high frequency circuits in

t

rr

Reverse recovery time

25

25

ns

general where low conduction and

I

RRM

Repetitive peak reverse

0.2

0.2

A

switching losses are essential.

current

PINNING - SOD113

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode

2

anode

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-150

-200

V

RRM

Repetitive peak reverse voltage

-

150

200

V

V

RWM

Crest working reverse voltage

-

150

200

V

V

R

Continuous reverse voltage

-

150

200

V

I

F(AV)

Average forward current

1

square wave;

δ = 0.5;

T

-

8

A

sinusoidal; a = 1.57;

T

-

7.3

A

I

F(RMS)

RMS forward current

-

11.3

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

16

A

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

80

A

current

t = 8.3 ms

-

88

A

sinusoidal; with reapplied

V

RWM(max)

I

t = 10 ms

-

32

A

I

RRM

Repetitive peak reverse current t

-

0.2

A

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

12

case

k

a

12

1 Neglecting switching and reverse current losses

October 1998

1

Rev 1.200