NTP65N02RG datasheet(4/8 Pages) ONSEMI

4 / 8 page

NTB65N02R, NTP65N02R

http://onsemi.com

400

800

1200

1600

2000

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(V)

Figure 7. Capacitance Variation

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

Ciss

VDS = 0 V

Crss

VGS

VDS

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

QGS

QGD

VGS

ID = 30 A

TJ = 25°C

100

1000

100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

VDS = 10 V

ID = 30 A

VGS = 10 V

1000

0.1

100

RDS(ON) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

100

1 ms

10 ms

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

Figure 10. Diode Forward Voltage versus

Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased Safe Operating Area

TJ = 25°C

TJ = 150°C

td(off)

td(on)

100

VDS

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