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ESD4.5V20D-SC Datasheet(PDF) 2 Page - UN Semiconducctor INC |
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ESD4.5V20D-SC Datasheet(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() Characteristic Curves ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Electrical Characteristics @ 25℃ Unless Otherwise Specified ) Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 ESD4.5V20D-SC Transient Voltage Suppressors for ESD Protection Fig4. Clamping Voltage vs. Peak Pulse Current VRWM VBR IR CJ VC Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction capacitance Positive Clamping Voltage -- IT=1mA; VRWM =4.5 V, T=25°C; VR = 0 V, f = 1MHz ; IPP =50.0 A, TP =8/20μs; IPP =220.0 A, TP =8/20μs; -- 4.8 -- -- -- -- -- -- -- 400 -- -- 4.5 -- 1.0 -- 8.5 20.0 V V μA pF V V Characteristics Symbol Test Conditions Typ. Max Unit Min. Fig2. Power Rating Derating Curve Fig1. 8/20μs Pulse Waveform 0 5 10 15 20 25 30 120 tr 100 80 60 40 Peak Value IPP 20 0 td=t IPP/2 TEST WAVEFORM PARAMETERS tr=8μs td=20μs 0 25 50 75 100 125 150 110 100 40 30 20 10 0 90 80 70 60 50 Ambient Temperature – TA (ºC) t - Time (μs) Fig3. ESD Pulse Waveform (according to IEC61000-4-2) 100% 90% 10% tr 30ns = Time 60ns |
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