FDPF18N50T datasheet(2/4 Pages) ISC

2 / 4 page

ISF1035

eq FDPF18N50T

N-Channel MOSFET Transistor

www.iscsemi.com

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

500

IDSS

Zero Gate Voltage Drain Current

VDS= 500V; VGS= 0

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

100

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

3.0

5.0

RDS(on)

Drain-Source On-Resistance

Pulse test:pulse width

VGS= 10V; ID= 10A

0.21

0.265

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V,

f = 200kHz

2753

Coss

Output Capacitance

274

Crss

Reverse Transfer Capacitance

Gate Resistance

VGS=0V,f=1.0MHz

1.4

Total Gate Charge

VDD = 400V,

ID = 18A,

VGS = 10V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

17.5

td(on)

Turn-on Delay Time

VDD = 250V,

ID = 18A,

RG = 25Ω,

VGS = 10V

55.5

Turn-on Rise Time

32.7

td(off)

Turn-off Delay Time

226

Turn-off Fall Time

58.5

Drain - Source Body Diode Characteristics

ISD

Continuous Source Current

Tc = 25 ºC

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

ISD= 18A; VGS= 0V

1.4

trr

Reverse Recovery Time

VGS = 0V,IF = IS, diF/dt = 100A /μs

318.6

Qrr

Reverse Recovery Charge

4.5

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