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FS150R17N3E4 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # FS150R17N3E4
Description  IGBT Module
PDF  6 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FS150R17N3E4 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

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ISGM2016
eq FS150R17N3E4
IGBT Module
www.iscsemi.com
3
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Eon
Turn-on switching losses
VCC=900V,
IC=150A
VGE=±15V
RGon=0.62Ω
RGoff =0.62Ω
L=50nH
TJ=25℃
--
18.0
--
mJ
TJ=125℃
--
29.0
--
TJ=150℃
--
32.0
--
Eoff
Turn-off switching losses
TJ=25℃
--
26.5
--
TJ=125℃
--
43.5
--
TJ=150℃
--
49.0
--
ISC
Short circuit data
VCC=1000V; VGE= 15V;
VCEmax=VCES-LsCE·
di/dt
tp
≤ 10us,TJ=150℃
--
--
--
--
Rth( j-c)
Thermal Resistance,Junction to Case per IGBT
--
--
--
℃
/W
Rth(c-h)
Thermal Resistance, Case to heatsink per IGBT
--
0.1
--
℃
/W
Diode Inverter
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VRRM
Repetitivepeakreversevoltage
TC=25℃
1700
--
--
V
IF
ContinuousDCforwardcurrent
--
150
--
--
A
IFRM
Repetitivepeakforwardcurrent
tP = 1 ms
300
--
--
A
I²t
I²t-value
VR = 0 V, tP = 10 ms,
Tvj = 125°C
VR = 0 V, tP = 10 ms,
Tvj = 150°C
3800
3700
--
--
A²s
VF
Forward Voltage
IF=150A; TC=25℃
--
1.8
2.2
V
IF=150A; TC=125℃
--
1.9
--
IF=150A; TC=150℃
--
1.95
--
IRM
Peak Reverse recovery current
VR=1500V;
IF=4900A;
VGE=-15V,
TJ=25℃
--
--
--
A
TJ=125℃
--
--
TJ=150℃
--
--
--
Qrr
Reverse Recovery Charge
TJ=25℃
--
--
--
uC
TJ=125℃
--
TJ=150℃
--
--
--



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