www.dacosemi.com.tw

- 2 -

DACO SEMICONDUCTOR CO., LTD.

®

min.

typ.

max.

VDC

650

-

-

-1.50

1.70

-

1.70

2.00

-50

80

-

80

300

Reverse current

IR

VR =650V, Tj =25 °C

VR =650V, Tj =175 °C

DC blocking voltage

V

Diode forward voltage

VF

IF =75A, Tj =25 °C

IF =75A, Tj =175 °C

Electrical Characteristics, at Tj=25 °C, unless otherwise specified. (per diode)

Static Characteristics

Symbol

Conditions

Values

Unit

A

Qrr

-

239

-

nC

-

2380

-

-

344

-

-

339

-

R JC

0.18

oC/W

pF

VR=200V, f=1 MHz

VR=400V, f=1 MHz

Thermal Characteristics (per diode)

Thermal resistance from junction to case

Total capacitive charge

VR=400V, Tj=25 °C

Total capacitance

C

VR=0V, f=1 MHz

AC Characteristics (per diode)

typ.

Static Characteristics

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Symbol

Conditions

Values

Unit

Tj=25 °C

Tj=25 °C

Tj=25 °C

CSRI2×75-065P2B