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UT3N06L-AE3-R Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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UT3N06L-AE3-R Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  1 N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 60 0.0 75 at V GS = 10 V 4.0 2. 1 nC 0.0 86 at V GS = 4.5 V 3.8 G S D Top View 2 3 TO-236 (SOT23) 1 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 1 20 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.0 A TC = 70 °C 3.4 TA = 25 °C 3. 1b, c TA = 70 °C 2.5b, c Pulsed Drain Current IDM 12 Continuous Source-Drain Diode Current TC = 25 °C IS 1.39 TA = 25 °C 0.91b, c Avalanche Current L = 0.1 mH IAS 6 Single-Pulse Avalanche Energy EAS 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 1.66 W TC = 70 °C 1.06 TA = 25 °C 1.09b, c TA = 70 °C 0.7b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d ≤ 5 s RthJA 90 115 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 S N-Channel MOSFET G D UT3N06L-AE3-R www.VBsemi.com 服务热线：400-655-8788 |
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