IPD30N06S2L-13

N-Channel MOSFET

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 1mA

55

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS=55V; VGS= 0

--

--

1

uA

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

--

--

±

100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 80uA

1.2

1.6

2.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 30A

--

--

13

mΩ

RDS(on)

Drain-Source On-Resistance

VGS= 4.5V; ID= 30A

--

--

17

mΩ

VSD

Diode Forward Voltage

ISD= 30A; VGS= 0V

--

--

1.3

V

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