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IPP80R280P7 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPP80R280P7 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1051 eq IPP80R280P7 N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATIONS · Power Factor Correction (PFC) · Recommended For Hard And Soft Switching Flyback Topologies For LED Lighting · Low Power Chargers And Adapters,Audio and Lndustrial Power Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 101 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.23 ℃ /W |
Similar Part No. - IPP80R280P7 |
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Similar Description - IPP80R280P7 |
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