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MEK150-04DA Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MEK150-04DA
Description  Fast Recovery Diode Module
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MEK150-04DA Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  MEK150-04DA Datasheet HTML 1Page - Inchange Semiconductor Company Limited MEK150-04DA Datasheet HTML 2Page - Inchange Semiconductor Company Limited MEK150-04DA Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISUM6020
eq MEK150-04DA
Fast Recovery Diode Module
www.iscsemi.com
1
DESCRIPTION
·
International standard packagewith DCB ceramic base plate
·
Planar passivated chips
·
Short recovery time
·
Low switching losses
·
Soft recovery behaviour
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VR
Diode reverse voltage,TJ=25℃
400
V
IF
DC current,TC=100℃,rectangular, d = 0.5
150
A
IFpuls
Pulsed diode current, TVJ = 45℃; t = 10 ms (50 Hz), sine
1200
A
PD
Power dissipation per diode,TC=25℃
260
W
TJ
Junction Temperature
-40~150
℃
Tstg
Storage Temperature Range
-40~150
℃
Visol
Insulation test voltage, t = 1min
3600
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.35
℃
/W


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