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PSMN030-150P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PSMN030-150P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1061 eq PSMN030-150P N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 55.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 55.5 A IDM Drain Current-Single Pulse 222 A PD Total Dissipation @TC=25℃ 250 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.6 ℃ /W |
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