1996 Dec 11

2

Philips Semiconductors

Preliminary specification

Magnetic field sensor

KMZ11B1

DESCRIPTION

The KMZ11B1 is a sensitive magnetic field sensor,

employing the magnetoresistive effect of thin-film

permalloy. Its properties enable this sensor to be used in a

wide range of applications for current and field

measurement, revolution counters, angular or linear

displacement sensors, proximity detectors, etc.

The sensor can be operated at any frequency between DC

and 1 MHz.

PINNING

PIN

SYMBOL

DESCRIPTION

output voltage

2

GND

ground

3

−V

O

output voltage

supply voltage

5 to 8

n.c.

not connected

Fig.1 Simplified outline.

handbook, halfpage

4

1

5

8

MGD804

pin 1

index

Hy

Hx

QUICK REFERENCE DATA

CIRCUIT DIAGRAM

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

bridge supply voltage

−

5

−

V

magnetic field strength

−2

−

+2

kA/m

auxiliary field

−

3

−

kA/m

S

sensitivity

−

4

−

bridge resistance

1.9

−

2.9

k

Ω

offset voltage

−1.5

−

+1.5

mV/V

mV V

⁄

kA m

⁄

-----------------

Fig.2 Simplified circuit diagram.

handbook, full pagewidth

MLC716

4

3

2

V

CC

1

+VO

–VO

GND