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L652DU12RI Datasheet(PDF) 26 Page - Advanced Micro Devices

Part # L652DU12RI
Description  128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
PDF  54 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

L652DU12RI Datasheet(HTML) 26 Page - Advanced Micro Devices

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24
Am29LV652D
24961A5 May 5, 2006
D A TA
SH EE T
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x8)
Data
Description
1Bh
27h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
VPP Min. voltage (00h = no VPP input present)
1Eh
00h
VPP Max. voltage (00h = no VPP input present)
1Fh
04h
Typical timeout per single byte write 2N µs
20h
00h
Typical timeout for Min. size buffer write 2N
µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2N ms
22h
00h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
05h
Max. timeout for byte write 2N times typical
24h
00h
Max. timeout for buffer write 2N times typical
25h
04h
Max. timeout per individual block erase 2N times typical
26h
00h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Addresses (x8)
Data
Description
27h
17h
Device Size = 2N byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
7Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information (refer to CFI publication 100)



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