DS30734 Rev. 3 - 2

1 of 4

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DMN2005K

© Diodes Incorporated

DMN2005K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

A

E

J

L

TOP VIEW

M

B

C

H

G

D

D

K

•

Low On-Resistance

•

Very Low Gate Threshold Voltage, 0.9V Max.

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

ESD Protected Gate

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating

94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Finish

⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

•

Marking: See Page 4

•

Ordering & Date Code Information: See Page 4

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

Source

Body

Diode

Gate

Gate

Protection

Diode

Drain

ESD protected

EQUIVALENT CIRCUIT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±10

V

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

300

600

mA

Total Power Dissipation (Note 1)

350

mW

Thermal Resistance, Junction to Ambient

357

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Notes:

1.

Device mounted on FR-4 PCB.

2.

No purposefully added lead.

3.

Pulse width

≤10μS, Duty Cycle ≤1%.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SPICE MODEL: DMN2005K