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AM29LV640MT100REF Datasheet(PDF) 57 Page - Advanced Micro Devices |
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AM29LV640MT100REF Datasheet(HTML) 57 Page - Advanced Micro Devices |
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57 / 66 page  February 1, 2007 26190C8 Am29LV640MT/B 55 D A TA SH EET AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See Erase And Programming Performance on page 57 for more information. 3. For 1–16 words programmed/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. When using the program suspend/resume feature, if the suspend command is issued within t POLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Description Speed Options JEDEC Std. 90R 100, 100R 112, 112R 120, 120R Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 120 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 45 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 11 µs Per Word Typ 22 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 8.8 µs Per Word Typ 17.6 µs Single Word/Byte Program Operation (Note 2) Byte Typ 100 µs Word 100 Accelerated Single Word/Byte Programming Operation (Note 2) Byte Typ 90 µs Word 90 t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t RH RESET High Time Before Write (Note 1) Min 50 ns t POLL Program Valid Before Status Polling (Note 6) Max 4 µs |
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