NVMFWS2D5N08X

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2

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.12

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

39

4. Surface−mounted on FR4 board using 1 in2, 1 oz. Cu pad.

5. RthJA is determined by the user’s board design.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1 mA, TJ = 25°C

80

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

DV(BR)DSS/

DTJ

ID = 1 mA, Referenced to 25°C

31.6

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, TJ = 25°C

1

mA

VDS = 80 V, TJ = 125°C

250

Gate−to−Source Leakage Current

IGSS

VDS = 20 V, VDS = 0 V

100

nA

ON CHARACTERISTICS

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 37 A, TJ = 25°C

2.2

2.55

mW

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 184 mA, TJ = 25°C

2.4

3.6

V

Gate Threshold Voltage Temperature

Coefficient

DVGS(TH)/

DTJ

VGS = VDS, ID = 184 mA

−7.5

mV/°C

Forward Transconductance

gFS

VDS = 5 V, ID = 37 A

115

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, VDS = 40 V, f = 1 MHz

3200

pF

Output Capacitance

COSS

930

Reverse Transfer Capacitance

CRSS

14

Output Charge

QOSS

66

nC

Total Gate Charge

QG(TOT)

VGS = 6 V, VDD = 40 V, ID = 37 A

28

VGS = 10 V, VDD = 40 V, ID = 37 A

45

Threshold Gate Charge

QG(TH)

10

Gate−to−Source Charge

QGS

15

Gate−to−Drain Charge

QGD

7

Gate Plateau Voltage

VGP

4.7

V

Gate Resistance

RG

f = 1 MHz

0.8

W

SWITCHING CHARACTERISTICS

Turn−On Delay Time

td(ON)

Resistive Load,

VGS = 0/10 V, VDD = 64 V,

ID = 37 A, RG = 2.5 W

24

ns

Rise Time

tr

9

Turn−Off Delay Time

td(OFF)

36

Fall Time

tf

6

SOURCE−TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 37 A, TJ = 25°C

0.82

1.2

V

VGS = 0 V, IS = 37 A, TJ = 125°C

0.66

Reverse Recovery Time

tRR

VGS = 0 V, dI/dt = 1000 A/ms,

IS = 37 A, VDD = 64 V

24

ns

Charge Time

ta

13

Discharge Time

tb

10

Reverse Recovery Charge

QRR

167

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.