NVMFWS3D0N08X

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2

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.26

C/W

Thermal Resistance, Junction−to−Ambient

RqJA

39

4. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz. Cu pad.

5. RthJA is determined by the user’s board design.

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1 mA

80

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

DV(BR)DSS/

DTJ

ID = 1 mA, Referenced to 25C

31.6

mV/C

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, TJ = 25C

1

mA

VDS = 80 V, TJ = 125C

250

Gate−to−Source Leakage Current

IGSS

VDS = 20 V, VDS = 0 V

100

nA

ON CHARACTERISTICS

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 31 A

2.6

3.0

mW

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 153 mA

2.4

3.6

V

Gate Threshold Voltage Temperature

Coefficient

DVGS(TH)/

DTJ

VGS = VDS, ID = 153 mA

−7.5

mV/C

Forward Transconductance

gFS

VDS = 5 V, ID = 31 A

97

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, VDS = 40 V, f = 1 MHz

2680

pF

Output Capacitance

COSS

780

Reverse Transfer Capacitance

CRSS

12

Output Charge

QOSS

56

nC

Total Gate Charge

QG(TOT)

VGS = 6 V, VDD = 40 V, ID = 31 A

23

VGS = 10 V, VDD = 40 V, ID = 31 A

38

Threshold Gate Charge

QG(TH)

7

Gate−to−Source Charge

QGS

13

Gate−to−Drain Charge

QGD

6

Gate Plateau Voltage

VGP

4.7

V

Gate Resistance

RG

f = 1 MHz

0.7

W

SWITCHING CHARACTERISTICS

Turn−On Delay Time

td(ON)

Resistive Load,

VGS = 0/10 V, VDD = 64 V,

ID = 31 A, RG = 2.5 W

22

ns

Rise Time

tr

8

Turn−Off Delay Time

td(OFF)

33

Fall Time

tf

5

SOURCE−TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 31 A, TJ = 25C

0.82

1.2

V

VGS = 0 V, IS = 31 A, TJ = 125C

0.66