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AM49DL640AH Datasheet(PDF) 13 Page - SPANSION

Part # AM49DL640AH
Description  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
PDF  63 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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AM49DL640AH Datasheet(HTML) 13 Page - SPANSION

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December 12, 2003
Am49DL640AH
11
ADV ANCE
I N FO RMAT I O N
Table 2.
Device Bus Operations—Flash Byte Mode
Legend: L = Logic Low = V
IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector
Address, A
IN = Address In, DIN = Data In, DOUT = Data Out, pSRAM = Pseudo SRAM
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = V
IL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = V
IL, the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = V
ACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = V
IL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = V
HH, all sectors will be unprotected.
Operation
(Notes 1, 2)
CE#f CE1#s CE2s OE# WE#
Addr.
LB#s
(Note 3)
UB#s
(Note 3)
RESET#
WP#/ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
Read from Flash
L
HX
LH
A
IN
XX
HL/H
D
OUT
High-Z
XL
Write to Flash
L
HX
HL
A
IN
XX
H
(Note 3)
D
IN
High-Z
XL
Standby
V
CC ±
0.3 V
HX
XX
X
X
X
V
CC ±
0.3 V
H
High-Z
High-Z
XL
Output Disable
L
L
H
H
H
X
LX
H
L/H
High-Z
High-Z
XL
Flash Hardware
Reset
X
HX
X
X
X
X
X
L
L/H
High-Z
High-Z
XL
Sector Protect
(Note 5)
L
HX
HL
SADD,
A6 = L,
A1 = H,
A0 = L
XX
V
ID
L/H
D
IN
X
XL
Sector
Unprotect
(Note 5)
L
HX
HL
SADD,
A6 = L,
A1 = H,
A0 = L
XX
V
ID
(Note 6)
D
IN
X
XL
Temporary
Sector
Unprotect
X
Hx
XX
A
IN
XX
V
ID
(Note 6)
D
IN
High-Z
XL
Read from
pSRAM
HL
H
L
H
A
IN
LL
HX
D
OUT
D
OUT
HL
High-Z
D
OUT
LH
D
OUT
High-Z
Write to pSRAM
H
L
H
X
L
A
IN
LL
HX
D
IN
D
IN
HL
High-Z
D
IN
LH
D
IN
High-Z



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