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2N4953 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N4953 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 4 page ![]() ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICBO Collector Cut-off Current VCB = 40V, IE = 0 50 nA IEBO Reverse Base Current VEB = 3.0V, IC = 0 50 nA On Characteristics * hFE DC Current Gain VCE = 10V, IC = 1.0mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA 75 150 200 600 VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA 1.3 V VBE(on) Base-Emitter On Voltage VCE = 10V, IC = 150mA 1.2 V Small Signal Characteristics Cob Output Capacitance VCB = 10V, f = 1.0MHz 8.0 pF hfe Small-Signal Current Gain IC = 20mA, VCE = 10V, f = 100MHz 2.5 ton Turn-On Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 40 ns toff Turn-Off Time 400 ns Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W |
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