MMBTA42 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2000 Apr 11

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

MMBTA42

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 200 V

−

100

IEBO

emitter cut-off current

IC = 0; VEB =6V

−

100

hFE

DC current gain

VCE =10V

IC = 1 mA

−

IC =10mA

−

IC =30mA

−

VCEsat

collector-emitter saturation voltage

IC = 20 mA; IB =2mA

−

500

VBEsat

base-emitter saturation voltage

IC = 20 mA; IB =2mA

−

900

Cre

feedback capacitance

IC =ic = 0; VCB =20V;

f = 1 MHz

−

3pF

transition frequency

IC = 10 mA; VCE =20V;

f = 100 MHz

−

MHz

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