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IXTK170P10P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTK170P10P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1066 eq IXTK170P10P P-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= -170A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V APPLICATIONS · motor drive, DC-DC converter, power switch and solenoid drive. Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous @Tc=25℃ -170 A IDM Drain Current-Single Pulsed -510 A PD Total Dissipation @TC=25℃ 890 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.14 ℃ /W |
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