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B2DM060065N1 Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR

Part # B2DM060065N1
Description  SiC Schottky Diode
PDF  7 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2DM060065N1 Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR

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Maximum Ratings (T
C=25°C unless otherwise specified)
Thermal and Mechanical Characteristics
Symbol
Parameter
Value
Unit
Symbol
Parameter
Test conditions
Test conditions
Unit
Value
V
RRM
V
RSM
I
F
I
FSM
∫i 2dt
P
tot
T
j
T
stg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Continuous forward current
Non-repetitive forward surge current
i2t value
Power dissipation
Operating junction temperature
Storage temperature
T
C=25°C
T
C=25°C
T
C=110°C
T
C=25°C, tp=10ms
T
C=25°C, tp=10ms
Half sine wave
650
650
101*/202**
T
C=110°C
60*/120**
386*
745*
300*/600**
130*/260**
-40~175
-40~175
V
V
A
A
A2S
W
°C
°C
Min.
Typ.
Max.
0.50*/
0.25**
1.5
1.3
28.14
2500
10.4
9.6
4.4
8.4
K/W
N/m
N/m
g
V
mm
mm
mm
mm
Thermal resistance from
junction to case
Mounting torque
M4-0.7 screws
M4-0.7 screws
Terminal to Terminal
Terminal to Backside
Terminal to Backside
Terminal to Terminal
I
ISOL<1mA, RMS,
50Hz,1min
Terminal connection torque
Package weight
Isolation voltage
Internal isolation
Creepage Distance on
Surface
Clearance Distance
Through Air
R
th(jc)
M
d
M
dt
W
t
V
ISOL
d
Ctt
d
Ctb
d
Stb
AlN
d
Stt
* Per Leg, ** Per Device
* Per Leg, ** Per Device
B2DM060065N1
Rev. 0.0



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