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PBYL1025B Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYL1025B Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYL1025B series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Low thermal resistance V F ≤ 0.4 V GENERAL DESCRIPTION PINNING SOT404 Schottky rectifier diodes intended PIN DESCRIPTION for use as output rectifiers in low voltage, high frequency switched 1 no connection mode power supplies. 2 cathode 1 The PBYL1025B series is supplied in the SOT404 surface mounting 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYL10 20B 25B V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 119 ˚C - 20 25 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 132 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 132 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 130 A current t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a tab 3 13 tab 2 1 it is not possible to make connection to pin 2 of the SOT428 package October 1998 1 Rev 1.100 |
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