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ACPDQC3V3C-HF Datasheet(PDF) 1 Page - Comchip Technology |
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ACPDQC3V3C-HF Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() ACPDQC3V3C-HF SMD ESD Protection Diode Mechanical data - Case: 0402C/SOD-923F standard package, molded plastic. - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. - Mounting position: Any. - Weight: 0.001 grams (approx.). Comchip Technology CO., LTD. RoHS Device Halogen Free Circuit Diagram Maximum Rating ( at TA=25°C unless otherwise noted ) kV A W ±20 5 65 VESD IPP PPP °C -55 to +125 -55 to +125 TJ Operating temperature range Peak pulse current Peak pulse power Parameter Symbol Value Unit ESD capability Storage temperature range TSTG °C Conditions TP = 8/20µs TP = 8/20µs IEC 61000-4-2(Air) IEC 61000-4-2(Contact) Electrical Characteristics ( at TA=25°C unless otherwise noted ) Dimensions in inches and (millimeter) 0402C/SOD-923F 0.022(0.55) 0.018(0.45) 0.001(0.02) Max. 0.041(1.05) 0.037(0.95) 0.026(0.65) BSC. 0.012(0.30) 0.008(0.20) 0.022(0.55) 0.018(0.45) 0.026(0.65) 0.022(0.55) Features - Bi-directional ESD protection. - Surface mount package. - Ultra small SMD package:0402C. - High component density. - IEC 61000-4-2 (ESD) ; ±20 KV (Contact) - ESD rating of Class 3B per Human Body Mode. - AEC-Q101 Qualified. V V 3.3 VPT VRWM Punch-through voltage Working peak reverse voltage Parameter Conditions Symbol Min Typ Max Unit IPT = 2uA Snap-back voltage ISB = 50mA VSB Reverse leakage current VRWM = 3.3V V IR 2.8 Clamping voltage IPP = 1 A, Tp = 8/20µs VC V 0.5 0.05 3.5 8 µA IPP = 5 A, Tp = 8/20µs VC V 13 Junction capacitance VR = 0 V, f = 1MHz CJ pF 6 6 V 3.6 Diode breakdown voltage IT = 1mA VBR High-Reliability and High-Performance REV:C Page 1 AQW-G7026 |
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Similar Description - ACPDQC3V3C-HF |
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