Peak Pulse Current, IPP (A)

2.0

0

5

10

15

1.5

1

20

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

6

Reverse leakage current

IR

nA

VRWM = 5V

50

Clamping voltage

VC

V

IPP = 1A, TP = 8/20µs

IPP = 2A, TP = 8/20µs (Note 1)

V

Working peak reverse voltage

VRWM

5

Dynamic resistance

RDYN

9

1.1

1

11

14

Clamping voltage

VCL

V

IPP = 8A, TP = 100ns

IPP = 16A, TP = 100ns

21

30

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

0.2

SMD ESD Protection Diode

Electrical Characteristics (at TA=25°C unless otherwise noted)

0.00

0.15

0.20

0

1

2

4

3

Reverse Voltage, (V)

0.25

0%

20%

40%

60%

80%

100%

120%

Ta=25°C

Peak Value Ipp

e-t

td= t Ipp/2

5

0.05

0.10

Rating and Characteristic Curves (ACPDZC5V0SPC-HF)

Notes: 1. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5

.

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Ω

REV:A

Page 2

AQW-G7033

0

25

50

75

100

125

0

20

40

60

80

100

120

Test Waveform

parameters

tf = 8µs

td = 20µs

0

5

10

15

20

25

30

Fig.3 - Capacitance Between

Terminals Characteristics

Fig.4 - Clamping Voltage Vs.

Peak Pulse Current

Fig.2 - Power Rating Derating Curve

Fig.1 - 8/20µs Peak Pulse Current

Waveform Acc. IEC 61000-4-5

Time, (µs)

Ambient Temperature, (°C)

8/20µs waveform

f=1MHz

TA=25°C

Mounting on glass epoxy PCBs