PBYL2525CTB datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Rectifier diodes

PBYL2525CT, PBYL2525CTB series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

D = 1.0

0.5

0.2

0.1

PBYL2525CT

Rs = 0.012 Ohms

Vo = 0.320 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

144

138

132

126

120

114

D =

10uA

100uA

1mA

10mA

100mA

PBYR1525CT

VR / V

IR / A

100

Tj = 150 C

125

02468

a = 1.57

1.9

2.2

2.8

PBYL2525CT

Rs = 0.012 Ohms

Vo = 0.32 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

144

138

132

126

120

100

1000

10000

PBYR1525CT

VR / V

Cd / pF

0.2

0.4

0.6

0.8

PBYR1525CT

VF / V

IF / A

Tj = 125 C

Tj = 25 C

typ

max

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYR2525CT

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

March 1998

Rev 1.000

PBYL2525CTB Datasheet(PDF) 3 Page - NXP Semiconductors

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