N2NE10L datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN2NE10L

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

11.7

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 1A

VGS= 5V, ID= 1A

0.33

0.38

0.4

0.45

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS>ID(on) x RDS(on)max,

ID=1A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

345

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=80V, ID = 7A

VGS =5V

(see Figure 13)

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

rise time

VDD=50 V, ID=3.5A,

RG=4.7Ω, VGS=5V

(see Figure 14)

td(off)

Turn-off-delay time

fall time

VDD=50 V, ID=3.5A,

RG=4.7Ω, VGS=5V

(see Figure 14)

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD=80 V, ID=7A,

RG=4.7Ω, VGS=5V

(see Figure 14)

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