DRAM

DRAM

DRAM

DRAM

DRAM

AS4LC4M16

Austin Semiconductor, Inc.

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

18

AS4LC4M16

Rev. 1.0 7/02

EDO-PAGE-MODE READ-WRITE CYCLE

(LATE WRITE and READ-MODIFY-WRITE cycles)

NOTES:

* t

RASP

(MAX) = 80,000ns for XT temperature version.