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AS4SD16M16 Datasheet(PDF) 49 Page - Austin Semiconductor |
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AS4SD16M16 Datasheet(HTML) 49 Page - Austin Semiconductor |
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49 / 51 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD16M16 Austin Semiconductor, Inc. AS4SD16M16 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 49 WRITE - DQM OPERATION1 *CAS latency indicated in parentheses. NOTES: 1. For this example, the burst length = 4. 2. A9, A11, and A12 = “Don’t Care” TIMING PARAMETERS MIN MAX MIN MAX tAH 0.8 ns tCKS 1.5 ns tAS 1.5 ns tCMH 0.8 ns tCH 2.5 ns tCMS 1.5 ns tCL 2.5 ns tDH 0.8 ns tCK(3) 7.5 ns tDS 1.5 ns tCK(2) 10 ns tRCD 20 ns tCKH 0.8 ns -75 UNITS -75 SYMBOL* UNITS SYMBOL* |
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