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ZVN4306AV Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVN4306AV Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 4 page ![]() ZVN4306AV ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 V I D=1mA, VGS=0V Gate-Source Threshold Voltage V GS(th) 1.3 3 V I D=1mA, VDS=VGS Gate-Body Leakage I GSS 100 nA V GS=± 20V, VDS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=60V, VGS=0 V DS=48V, VGS=0V, T=125°C(2) On-State Drain Current(1) I D(on) 12 A V DS=10V, VGS=10V Static Drain-Source On-State Resistance (1) R DS(on) 0.22 0.32 0.33 0.45 Ω Ω V GS=10V,ID=3A V GS=5V, ID=1.5A Forward Transconductance (1)(2) g fs 700 mS V DS=25V,ID=3A Input Capacitance (2) C iss 350 pF Common Source Output Capacitance (2) C oss 140 pF V DS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) C rss 30 pF Turn-On Delay Time (2)(3) t d(on) 8ns V DD ≈25V, VGEN=10V, I D=3A Rise Time (2)(3) t r 25 ns Turn-Off Delay Time (2)(3) t d(off) 30 ns Fall Time (2)(3) t f 16 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator |
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