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ZVN4306AV Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZVN4306AV
Description  N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
PDF  4 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZVN4306AV Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZVN4306AV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D=1mA, VGS=0V
Gate-Source
Threshold Voltage
V
GS(th)
1.3
3
V
I
D=1mA, VDS=VGS
Gate-Body Leakage
I
GSS
100
nA
V
GS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
I
DSS
10
100
µA
µA
V
DS=60V, VGS=0
V
DS=48V, VGS=0V, T=125°C(2)
On-State Drain
Current(1)
I
D(on)
12
A
V
DS=10V, VGS=10V
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.22
0.32
0.33
0.45
Ω
Ω
V
GS=10V,ID=3A
V
GS=5V, ID=1.5A
Forward
Transconductance
(1)(2)
g
fs
700
mS
V
DS=25V,ID=3A
Input Capacitance (2)
C
iss
350
pF
Common Source
Output Capacitance (2)
C
oss
140
pF
V
DS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
30
pF
Turn-On Delay Time
(2)(3)
t
d(on)
8ns
V
DD ≈25V, VGEN=10V,
I
D=3A
Rise Time (2)(3)
t
r
25
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
30
ns
Fall Time (2)(3)
t
f
16
ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator



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