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2

isc Silicon NPN Power Transistor

TTD1410B

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

250

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.04A

--

2.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.04A

--

2.5

V

ICBO

Collector Cutoff Current

VCB= 300V; IE= 0

--

20

uA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

--

20

uA

hFE-1

DC Current Gain

IC= 2A ; VCE=2V

2000

--

hFE-2

DC Current Gain

IC= 2A ; VCE= 4V

200

--

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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