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MMBD4448HTW Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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MMBD4448HTW Datasheet(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1 / 4 page ![]() Plastic-Encapsulate Diodes Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 V RMS Reverse Voltage VR(RMS) 5 7 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW Thermal Resistance from Junction to Ambient RθJA 625 /W Storage Temperature TSTG - 55 ~+150 ℃ ℃ ℃ Non-Repetitive Peak Switching Diode FEATURES Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Power Dissipation SOT-363 MMBD4448HADW MARKING:KA5 MARKING:KA6 MARKING:KA7 MARKING: MARKING: MMBD4448HCDW MMBD4448HSDW MMBD4448HTW MMBD4448HA W KAA KAB KA5 - + - - - + KA6 - KA7 + + + - + KAB KAA + - + + - - + - + - Soliddot = Green molding compound device, if none,the normal device. Soliddot = Pin1 indicate. D4448Hxx-SERIES MMB |
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