FD5000AV-100DA datasheet(1/2 Pages) MITSUBISHI

Part #	FD5000AV-100DA

Description	MITSUBISHI RECTIFIER DIODE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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1 / 2 page

Jul. 2004

PRELIMINARY

Notice:

This

is not

a final

specification.

Som

e parametric

limits

are subject

to change.

Conditions

Applied for all condition angles

f = 60Hz, sinewave

θ = 180°, Tf =70°C

One half cycle at 60Hz, Tj =150

°C start

(Recommended value 47kN)

Typical value 1450g

7850

5000

70

2.0

× 107

–40 ~ 150

39 ~ 55

—

MITSUBISHI RECTIFIER DIODE

FD5000AV-100DA

HIGH-POWER, GENERAL USE

PRESS PACK TYPE

FD5000AV-100DA

OUTLINE DRAWING

Dimensions in mm

APPLICATION

High-power inverters

Fly-hweel diode for GCT Thyristor

Power supplies as high frequency rectifiers

¡VRRM Repetitive peak reverse voltage ................... 5000V

¡IF(AV)

Average forward current ..................... 5000A

RMS forward current

Average forward current

Surge forward current

Current-squared, time integration

Operation junction temperature

Storage temperature

Mounting force required

Weight

A

kA

A2s

°C

kN

g

IF(RMS)

IF(AV)

IFSM

I2t

Tj

Tstg

—

Unit

Symbol

VRRM

VRSM

VR(DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Parameter

V

Symbol

Parameter

Unit

Ratings

MAXIMUM RATINGS

5000

2000

Voltage class

—

Conditions

Forward voltage

Repetitive peak reverse current

Thermal resistance

VFM

IRRM

Rth(j-f)

V

mA

K/W

Symbol

Parameter

Test conditions

Limits

Min.

Typ.

Max.

Unit

ELECTRICAL CHARACTERISTICS

IFM = 7000A, Tj = 150

°C

VRM = 5000V, Tj = 150

°C

Junction to Fin

—

1.6

200

0.0071

φ3.5 ± 0.2

2.2

± 0.2DEPTH

φ3.5 ± 0.2

2.2

± 0.2DEPTH

6.35

× 10.8

φ85 ± 0.2

φ120MAX

12

± 2

TYPE NAME

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