Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

On/Off States

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

20

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =250µA

0.45

0.8

1.2

V

Gate-Body Leakage Current

IGSS

VDS =0V, VGS =±4.5V

±1

µA

Zero Gate Voltage Drain Current

IDSS

VDS =16V, VGS =0V

100

nA

VGS =4.5V, ID =600mA

250

700

Drain-Source On-State Resistance

RDS(on)

VGS =2.5V, ID =500mA

330

850

mΩ

Forward Transconductance

g

FS

VDS =10V, ID =400mA

1

S

Dynamic Characteristics

Input Capacitance (note 4)

Ciss

100

Output Capacitance (note 4)

Coss

16

Reverse Transfer Capacitance (note 4)

Crss

VDS =16V,VGS =0V,f =1MHz

12

pF

Total Gate Charge

Qg

750

Gate-Source Charge

Qgs

75

Gate-Drain Charge

Qgd

VDS =10V,VGS =4.5V,

ID =250mA

225

nC

Switching Times (note 4)

Turn-On Delay Time

td(on)

5

Rise Time

tr

5

Turn-Off Delay Time

td(off)

25

Fall Time

tf

VDD=10V,

RL=47Ω, ID=200mA,

VGS=4.5V,RG=10Ω

11

nS

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage (note 5)

VSD

IS=0.15A, VGS = 0V

1.2

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. This test is performed with no heat sink at Ta=25

℃.

3. This test is performed with infinite heat sink at Tc=25

℃.

4.These parameters have no way to verify.

5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

a

T =25

℃ unless otherwise specified

B C1012KT

N-Channel Power MOSFET