www.basicsemi.com

5/19

Rev.0.1

Single-ChannelIsolatedGateDriver

BTD5350

7.SpecificationParameters

7.1AbsoluteLimits

PARAMETER

TESTCONDITIONS

MIN

MAX

UNIT

Input bias pin supply voltage

VCC1-GND1

-0.3

18

V

Driver bias supply

VCC2-VEE2

-0.3

35

VEE2 bipolar supply voltage for E version

VEE2-GND2

-17.5

0.3

Output signal voltage

OUT, OUTH, OUTL, CLAMP

VEE2-0.3

VCC2+0.3

Input signal voltage

IN+, IN-

GND1-5

VCC1+0.3

Junction temperature, TJ

-

-40

150

℃

Storage temperature, TS

-

-65

150

Pin soldering temperature, TL

Duration ＜10s

-

300

ESD

Human-body-model (HBM)

±3000

V

Charged-device model (CDM)

±1500

Note: These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond

those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended

periods may affect device reliability, and cause permanent damage to the device under severe conditions.

7.2ThermalInformation

SYMBOL

PARAMETER

VALUE

UNIT

SOP-8

SOW-8

RθJA Junction-to-ambient thermal resistance

87.7

91.4

℃/W

RθJC(top) Junction-to-case (top) thermal resistance

19.4

35.1

RθJB Junction-to-board thermal resistance

43.0

73.8

ψJT Junction-to-top characterization parameter

57.3

51.0

ψJB Junction-to-board characterization parameter

65.7

47.7

7.3RecommendedOperatingConditions

SYMBOL

PARAMETER

MIN

MAX

UNIT

VCC1 Input supply voltage (VCC1–GND1)

3

15

V

VCC2 Total supply voltage output side (VCC2–VEE2)

BTD5350xCx

13.2

33

BTD5350xBx

9.5

33

VEE2 Bipolar supply voltage for E version (VEE2–GND2)

-16

0

TA Ambient temperature

-40

125

℃